Synthesis of Methacrylate Copolymers Containing N-PMI and Their Application in Negative-type Photoresist

doi:10.7517/j.issn.1674-0475.2015.03.230

Abstract

Abstract:

Methacrylic Acid (MAA), Methyl Methacrylate (MMA), N-Phenylmaleimide (N-PMI) and Methacrylic Acid Cyclohexyl Ester (CHMA) were used to synthesize copolymer with different content of N-Phenylmaleide (N-PMI) through free radical polymerization to develop a prepolymer(PMMNC). Then a methacrylate copolymer G-PMMNC was prepared by reaction of the PMMNC and Glycidyl Methacrylate (GMA). Fourier transform infrared spectroscopy (FT-IR), nuclear magnetic resonance spectroscopy (¹HNMR), gel permeation chromatography (GPC), and differential scanning calorimetry (DSC) were used to characterize the structure and properties of copolymers. The results showed that the molecular weight and the glass transition temperature of copolymers increased with the increase of the content of N-PMI. Negative-photoresists based on G-PMMNC were prepared,the resolution of which could reach 40 μm, and have a good acid etching resistance.

Key words: N-Phenylmaleimide, methacrylate copolymer, photoresist, resolution

LIU Jingcheng, ZHENG Xiangfei, LIN Licheng, MU Qidao, SUN Xiaoxia, LIU Xiaoya. Synthesis of Methacrylate Copolymers Containing N-PMI and Their Application in Negative-type Photoresist[J]. Imaging Science and Photochemistry, 2015, 33(3): 230-237.

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