Imaging Science and Photochemistry ›› 2003, Vol. 21 ›› Issue (5): 346-356.DOI: 10.7517/j.issn.1674-0475.2003.05.346

Previous Articles     Next Articles

EVOLUTION AND PROGRESS OF DEEP UV 248 nm PHOTORESISTS

ZHENG Jin-hong, HUANG Zhi-qi, HOU Hong-sen   

  1. Beijing Institute of Chemical Reagents, Beijing 100022, P. R. China
  • Received:2003-05-15 Revised:2003-06-03 Online:2003-09-23 Published:2003-09-23

Abstract: Deep UV lithography operating at 248 nm with use of chemical amplification resists has finally become a production technology.This paper describes the evolution and progress of the deep UV 248 nm photoresists from aspects of birth of chemical amplification technology,evolution of deep UV 248 nm resists in matrix resins and PAG,dissolution inhibitor,processing problems and solutions of them.

Key words: chemical amplification, KrF excimer laser, deep UV lithography, 248 nm photoresists, matrix resins, acid-catalysis, photoacid generator

CLC Number: