THE PROGRESS OF ArF EXCIMER LASER PHOTORESIST

doi:10.7517/j.issn.1674-0475.2003.01.61

Abstract

Abstract: This article presented the progress of ArF excimer laser (193 nm) photoresist in last ten years.The different components of 193 nm photoresist were summarized in detail.It indicates that the fine pattern can be obtained by 193 nm lithography technology.ArF excimer laser is a leading candidate for the fabrication of fine pattern.But there are still some problems need to be resolved in the practice.

Key words: ArF excimer laser, photoresist, chemically amplification, matrix polymer, photoacid generator

CLC Number:

YU Shang-xian, YANG Ling-lu, ZHANG Gai-lian. THE PROGRESS OF ArF EXCIMER LASER PHOTORESIST[J]. Imaging Science and Photochemistry, 2003, 21(1): 61-71.

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