聚3-甲基噻吩的光电化学研究

doi:10.7517/j.issn.1674-0475.2004.05.378

影像科学与光化学 ›› 2004, Vol. 22 ›› Issue (5): 378-382.DOI: 10.7517/j.issn.1674-0475.2004.05.378

聚3-甲基噻吩的光电化学研究

武文俊¹, 郝彦忠^1,2

1. 河北科技大学, 化学与制药工程学院, 河北, 石家庄, 050018;
2. 河北科技大学, 化学与制药工程学院, 河北, 石家庄, 050018

收稿日期:2004-02-14 修回日期:2004-05-20 出版日期:2004-09-23 发布日期:2004-09-23
通讯作者: 郝彦忠,男,36岁,博士,教授,研究生导师,E-mil:yzhao@hebust.edu.cn.
基金资助:
国家自然科学基金资助项目(20203008);河北省自然科学基金资助项目(202351);河北省教育厅博士基金资助项目(110611).

A Photoelectrochemical Study of the Poly(3-Methythiophene)

WU Wen-jun¹, HAO Yan-zhong^1,2

1. College of Chemical & Pharmaceutical Engineering Shijiazhuang 050018, Hebei, P. R. China;
2. College of Science, Hebei University of Science and Technology, Shijiazhuang 050018, Hebei, P. R. China

Received:2004-02-14 Revised:2004-05-20 Online:2004-09-23 Published:2004-09-23

摘要/Abstract

摘要： 利用光电化学方法研究了聚3-甲基噻吩的光电化学性质.其禁带宽度为1.93 eV.同时确定了它的价带、导带位置.研究还发现聚3-甲基噻吩属于直接跃迁半导体,具有很好的光电流稳定性.得到的最高IPCE值近1.0%.

关键词: 聚3-甲基噻吩, 光电化学, 导电聚合物

Abstract: The photoelectrochemical properties of the poly(3-methythiophene) film on the ITO were investigated with photoelectrochemical methods.The band gap of the poly(3-methythiophene) is 1.93 eV.The conduction band and valence band were determined to be -3.44 eV and -5.37 eV respectively.The maximal IPCE is 1.0%.

Key words: poly(3-methythiophene), photoelectrochemistry, conducting polymers

中图分类号:

武文俊, 郝彦忠. 聚3-甲基噻吩的光电化学研究[J]. 影像科学与光化学, 2004, 22(5): 378-382.

WU Wen-jun, HAO Yan-zhong. A Photoelectrochemical Study of the Poly(3-Methythiophene)[J]. Imaging Science and Photochemistry, 2004, 22(5): 378-382.

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聚3-甲基噻吩的光电化学研究

A Photoelectrochemical Study of the Poly(3-Methythiophene)

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