The Study of 193 nm Photoresist

doi:10.7517/j.issn.1674-0475.2005.04.300

Abstract

Abstract: This paper discuss the preparation technology of 193 nm photoresist from the structure design of matrix polymer,the synthetic technology of monomer and of matrix polymer, the evaluation of photo-acid generator and prescription research. Various suitable monomers and various structural matrix polymers were synthesized, a plenty of formulation research was carried out and the best formulation was sieved. The photoresist sample prepared was evaluated by SEMATECH. Its best resolution is 0.1 μm, the minimun exposure dose is 26 mJ/cm²;it has not only excellent resolution and photosensitivity,but also good adhesiveness and anti-dry etching.

Key words: 193 nm, photoresist, monomer, matrix resin, photo-acid generator, formulation

CLC Number:

ZHENG Jin-hong, HUANG Zhi-qi, CHEN Xin, JIAO Xiao-ming, YANG Lan, WEN Wu, GAO Zi-qi, WANG Yan-mei. The Study of 193 nm Photoresist[J]. Imaging Science and Photochemistry, 2005, 23(4): 300-311.

References

[1] Hiroshi Ito. Chemically amplified resist:past. present and future[J]. Proc. SPIE,1999,3678:2-12.
[2] Hiroshi Ito. Evolution and progress of deep UV resist materials[J]. Photopolym. Sci. Technol., 1998,11(2):379-393.
[3] Hiroshi Ito. Deep-UV resists:evolution and status [J]. Solid State Technology,1996,39(7),164-170.
[4] 郑金红,黄志齐,侯宏森.248 nm深紫外光刻胶[J].感光科学与光化学,2003,21(5):346-356.Zheng J H, Huang Z Q, Hou H S. Evolution of deep UV 248 nm photoresists [J]. Photographic Science and Photochemistry, 2003,21(5) :346-356.
[5] Shipley Company LLC. Novel monomers polymers metholds of synthesis thereof and photoresist composition [P]. EP,1 127 870 A1,2001-08-29.
[6] Fang M C,Chang J F, Tai M C, et al. 193 nm photoresist development at union chemicals Labs., ITRI [J]. Proc.SPIE, 2000,3999: 919-925.
[7] International Business Machines Corporation. Photoresist compositions with cyclic olefin polymers having lacton moiety [P]. US patent, 6 251 560. 2001-06-26.
[8] Shipley Company LLC. Photoresist compositions comprising novel copolymer [P]. EP patent, 1 128 213 A2. 2001-08-29.
[9] 住友化学工业株式会社.化学放大正型光刻胶[P].CN patent,1 261 171A.2000-07-20.Sumitomo Chemical Co. Ltd. Chemical amplified positive photoresist compositions [P]. CN patent, 1 261 171A.2000-07-20.
[10] Shipley Company LLC. Photoresist compositions comprising blends of Ionic and non-Ionic photoacid generators [P].US patent ,6 280 911 B1. 2001-08-28.
[11] B.F谷德里奇公司.含酸不稳定侧基的多环聚合物的光刻胶组合物[P].CN patent,1 276 884A.2000-12-13B. F Goodrich Company. Photoresist compositions comprising multi-cyclo polymers with acid-labile groups [P]. CN patent, 1 276 884A. 2000-12-13.
[12] Fuji Photo Film Co. Positive photoresist composition for far ultraviolet ray exposure [P]. US patent ,6 242 153 B1.2001-06-05.
[13] Shipley Company LLC. Polymers and photoresist compositions for short wavelength imaging [P]. US patent, 6 165674. 2000-12-26.
[14] Fuji Photo Film Co. Negative working photoresist composition [P]. US patent, 6 103 449. 2000-08-15.
[15] Fuji Photo Film Co. Positive photoresist composition for exposure to far ultraviolet light [P]. US patent, 6 159 655.2000-12-12.
[16] Everlight USA Inc. Chemical amplified photoresist composition [P]. US patent ,6 316 159 B1.2001-11-13.
[17] Board of Regents, The University of Texas System. Photoresist compositions comprising norbornene derivative polymers with acid lablie groups [P]. US patent ,6 103 445.2000-08-15.
[18] 住友化学工业株式会社.一种化学增强的正型光刻胶组合物[P].CN patent,1 245 910A.2000-03-01.Sumitomo Chemical Co. Ltd. An chemical amplified positive photoresist composition [P]. CN patent, 1 245 910A.2000-03-01.
[19] 住友化学工业株式会社.光刻胶正胶组合物[P].CN patent,1 276 540A.2000-12-13.Sumitomo Chemical Co. Ltd. Positive photoresist compositions [P]. CN patent, 1 276 540A. 2000-12-13.
[20] Kajita T, Nishimura Y, Yamamoto M, et al. 193 nm single layer resist materials: Total consideration on design, physical properties, and lithographic performance on all major alicyclic platform chemistries[J]. Proc. SPIE, 2001,4345:712-724.
[21] Robert Allen. Progress in 193 nm photoresist: for sub-0.2 μm devicess, 193 nm photoresist may prove to be the best solution[J]. Semiconductor International, 1997,10: 70-81.
[22] 国际商业机器公司.含有环烯烃聚合物及疏水非甾族多脂环添加剂的光刻胶及组合物[P].CN patent,1 269530A. 2000-10-11.International Business Machines Corporation. Photoresist compositions with cyclic olefin polymers and hydrophobic non-sterodial multi-alicyclic additives[P]. CN patent, 1 269 530A. 2000-10-11.
[23] Hyundai Electronics Industries Co. Photoresist crosslinker and photoresist composition comprising the same [P]. US patent ,6 322 948 B1. 2001-11-27.
[24] Hyundai Electronics Industries Co. Copolymer resin of maleimide and alicyclic olefin-based monomers, photoresist containing the copolymer resin and the preparation thereof[P]. US patent ,6 028 153. 2000-02-22.