Development of Matrix Resins for 193 nm Deep UV Photoresist

doi:10.7517/issn.1674-0475.191013

Abstract

Abstract: The research progress of the main matrix resins and common synthetic monomers for 193 nm deep UV photoresist was reviewed. The film-forming resin includes poly(methyl)acrylate, cycloolefin-maleic anhydride (COMA), ethylene ether-maleic anhydride (VEMA), norborneene addendum polymer, cyclized polymer, organic-inorganic hybrid resin, and PAG graft on polymer backbone. The existing problems about exposure, resolution and etch resistance and the future development direction were also discussed.

Key words: photoresist, matrix resin, exposure, resolution, etch resistance

WEI Zibo, MA Wenchao, QIU Yingxin. Development of Matrix Resins for 193 nm Deep UV Photoresist[J]. Imaging Science and Photochemistry, 2020, 38(3): 409-415.

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