Synthesis of the Photoacid Generator——Triphenylsulfonium Tosylate

doi:10.7517/j.issn.1674-0475.2006.06.450

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LI Ping, LI Ping, LIU Jian-guo. Synthesis of the Photoacid Generator——Triphenylsulfonium Tosylate[J]. Imaging Science and Photochemistry, 2006, 24(6): 450-453.

[1] 王文君.化学增幅抗蚀剂用产酸剂--硫鎓盐的合成方法[J].中国环境管理干部学院学报,2005,15(2):55-58.Wang W J.Photoacid generator used in the chemical amplified photoresist-the method of synthesization of sulfoniumsalts[J].Journal of EMCC,2005,15(2):55-58.
[2] James F C,Timothy A,Arturo J O,et al.Complex triarylsulfonium salts as photoacid generators for Deep UV microlithography:synthesis,identification and lithographic characterization of key individual components[J].Proc.SPIE,1997,3049:473-484.
[3] Toshikage A,Hitoshi Y,Akira M,et al.A novd photoacid generator for chemically amplified resists[J].Proc.SPIE,2003,5039:1155-1163.
[4] Hitoshi Y,Toshikage A,Tobias H,et al.Novel non-ionic photoacid generator releasing strong acid for chemically amplified resists[J].Proc.SPIE,2004,5376:103-114.
[5] 王文君,李华民,王力元.一种适用于193 nm光刻胶的硫鎓盐光产酸剂的制备与性质[J].感光科学与光化学,2005,23(1):48-53.Wang W J,Li H M,Wang L Y.The preparation and properties of a kind sulfonium salt PAG applicable for 193 nm photoresist[J].Photographic Science and Potochemistry,2005,23(1):48-53.
[6] 刘安昌,莫健华,黄树槐,等.二苯亚砜与芳香化合物缩合制备芳基取代硫鎓盐的研究[J].化学世界,2005,7:424-427.Liu A C,Mo J H,Huang S H,et al.Study on the preparation of aryl-substituted sulfonium by condensation of biphenyl sulfoxides with aromatic compound[J].Chemical World,2005,7:424-427.
[7] Seiichi T,Seiiji N,Toshiiyuki I,et al.Radiation and photochemistry of onium salt acid generators in chemically amplified resists[J].Proc.SPIE,2000,3999,204-213.
[8] Nigel P H,Kevin M W.Mechanistic studies on the poly(4-tert-butoxycarbonyloxystyrene)/triphenylsulfonium salt photoinitiation process[J].Proc.SPIE,1991,1466:384-393.
[9] John L Dektar,Nigel P Hacker.Photochemistry of trisrylsulfonium salts[J].J.Am.Chem.Soc.,1990,112:6004-6015.
[10] Jams F C,Sheri L A,Xu G,et al.Impact of photoacid generator structure on DUV resist performance[J].Proc.SPIE,1999,3678:85-99.
[11] George S,Nagla N N,Siddhartha D,et al.Onium salt structure/property relationships in poly(4-tert-butyloxycar-bonyloxystyrene) deep UV resists[J].Proc.SPIE,1991,1466:26-37.
[12] Bernard S W,Sheldon W T,Potratz H A.The preparation of triarylsulfonium halides by the action of aryl Grignard reagents on diphenyl sulfoxide[J].J.Am.Chem.Soc.,1951,73:1965-1967.
[13] Crivello J V,Lam J H W.A new preparation of triarylsulfonium and selenonitm salts via the copper(Ⅱ)-catalyzed arylation of sulfides and selenides with diaryliodonium salts[J].J.Org.Chem.,1978,43:3055-3060.

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Synthesis of the Photoacid Generator——Triphenylsulfonium Tosylate

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