PREPARATION OF WATER BASED NEGATIVE CHEMICAL AMPLIFIED PHOTORESIST WITH HIGH GLASS TRANSITION TEMPERATURE

doi:10.7517/j.issn.1674-0475.1998.03.245

Imaging Science and Photochemistry ›› 1998, Vol. 16 ›› Issue (3): 245-249.DOI: 10.7517/j.issn.1674-0475.1998.03.245

Previous Articles Next Articles

PREPARATION OF WATER BASED NEGATIVE CHEMICAL AMPLIFIED PHOTORESIST WITH HIGH GLASS TRANSITION TEMPERATURE

WANG Hui¹, YOU Fengxiang¹, CHEN Ming¹, LI Yuanchang¹, LU Jianping¹, HONG Xiaoyin¹, HUANG Zhiqi², HU Defu²

1. Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China;
2. The Institute of Chemical Reagent, Beijing 100022, P. R. China

Received:1997-12-08 Revised:1998-02-12 Online:1998-08-20 Published:1998-08-20

Abstract

Abstract: A water-based near-UV negative chemical amplified photoresist was developed,consisting of styrene-co-N-(4-hydroxyphenyl)maleimide with high glass transition temperature (Tg), hexamethoxymethylmelamine (HMMM) triphenyl sulfonium salt.The conditions of photolithograpy process were preliminarily defined.Based on our research,the pattern with 1.39 µm lines and spaces was obtained by the conventional UV photolithography under the optimum parameters.

Key words: photoresist, photolithography, polystyrene-co-N-(4-hydroxypheny1)maleimide

WANG Hui, YOU Fengxiang, CHEN Ming, LI Yuanchang, LU Jianping, HONG Xiaoyin, HUANG Zhiqi, HU Defu. PREPARATION OF WATER BASED NEGATIVE CHEMICAL AMPLIFIED PHOTORESIST WITH HIGH GLASS TRANSITION TEMPERATURE[J]. Imaging Science and Photochemistry, 1998, 16(3): 245-249.

[1]	SUN Xiaoxia, SI Shuwei, ZHENG Xiangfei, LIU Jingcheng, MU Qidao. Synthesis of Naphthol-based Phenolic Resins and Its Application in Lift-off Photoresist [J]. Imaging Science and Photochemistry, 2020, 38(4): 609-614.
[2]	ZHENG Xiangfei, SUN Xiaoxia, LIU Jingcheng, MU Qidao, LIU Ren, LIU Xiaoya. Research Progress of Chemically Amplified Photoresist Materials [J]. Imaging Science and Photochemistry, 2020, 38(3): 392-408.
[3]	WEI Zibo, MA Wenchao, QIU Yingxin. Development of Matrix Resins for 193 nm Deep UV Photoresist [J]. Imaging Science and Photochemistry, 2020, 38(3): 409-415.
[4]	WEI Zibo, MA Wenchao, QIU Yingxin. Development of Matrix Resins for 248 nm Deep UV Photoresist [J]. Imaging Science and Photochemistry, 2020, 38(3): 430-435.
[5]	YOU Fengjuan, HAN Jun, YAN Chenfeng, WANG Liyuan. Research Progress of POSS-containing Photoresist Materials [J]. Imaging Science and Photochemistry, 2019, 37(5): 465-472.
[6]	LIN Licheng, XU Wenjia, LIU Jingcheng, LIU Ren, MU Qidao, LIU Xiaoya. Synthesis of Methacrylate Copolymer via RAFT Polymerization and Their Application in Negative Photoresist [J]. Imaging Science and Photochemistry, 2016, 34(4): 371-379.
[7]	WANG Kuan, LIU Jingcheng, LIU Ren, MU Qidao, ZHENG Xiangfei, JI Changwei, LIU Xiaoya. Research Progress of the Bottom Anti-reflective Coating for Photoresist [J]. Imaging Science and Photochemistry, 2016, 34(2): 123-135.
[8]	LI Weijie, ZHOU Guangda, LI Bogeng. Preparation and Performance of UV-curing Waterborne Dry Film Photoresist Based on Acrylic Resins [J]. Imaging Science and Photochemistry, 2016, 34(2): 172-180.
[9]	LIU Jingcheng, ZHENG Xiangfei, LIN Licheng, MU Qidao, SUN Xiaoxia, LIU Xiaoya. Synthesis of Methacrylate Copolymers Containing N-PMI and Their Application in Negative-type Photoresist [J]. Imaging Science and Photochemistry, 2015, 33(3): 230-237.
[10]	LIU Jian-guo, JIANG Ming, ZENG Xiao-yan. Research on the Synthesis and Properties of a Matrix Resin to be Used for 248 nm Photoresist [J]. Imaging Science and Photochemistry, 2013, 31(5): 349-360.
[11]	LIU Jian-guo. Preparation and Properties of Two High-Thermostability Matrix Resins for UV Positive Photoresist [J]. Imaging Science and Photochemistry, 2012, (5): 330-337.
[12]	ZHENG Jin-hong. Evolution and Progress of I-Line Photoresist Materials [J]. Imaging Science and Photochemistry, 2012, 30(2): 81-90.
[13]	XU Jian, CHEN Li, TIAN Kai-jun, HU Rui, LI Sha-yu, WANG Shuang-qing, YANG Guo-qiang. Molecular Structure of Advanced Photoresists [J]. Imaging Science and Photochemistry, 2011, 29(6): 417-429.
[14]	LIU Juan, KONG Fan-rong, YU Jin-xing, WANG Li-yuan. Chemically Amplified Positive i-Line Photoresist Containing Iodonium Salt PAG and Dye Sensitizers [J]. Imaging Science and Photochemistry, 2011, 29(6): 430-437.
[15]	XIE Wen, LIU Jian-guo, LI Ping. A Novel UV Photoresist Matrix Resin and Its Photolithographic Processes [J]. Imaging Science and Photochemistry, 2010, 28(1): 52-58.

PREPARATION OF WATER BASED NEGATIVE CHEMICAL AMPLIFIED PHOTORESIST WITH HIGH GLASS TRANSITION TEMPERATURE

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 15

Recommended Articles

Metrics

Comments