一种适用于193nm光刻胶的硫盐光产酸剂的制备与性质

doi:10.7517/j.issn.1674-0475.2005.01.48

影像科学与光化学 ›› 2005, Vol. 23 ›› Issue (1): 48-54.DOI: 10.7517/j.issn.1674-0475.2005.01.48

一种适用于193nm光刻胶的硫盐光产酸剂的制备与性质

王文君, 李华民, 王力元

北京师范大学, 化学系, 北京, 100875

收稿日期:2004-06-28 修回日期:2004-08-30 出版日期:2005-01-23 发布日期:2005-01-23
通讯作者: 王力元,E-mail:ly-w@263.net.
基金资助:
国家"十五""863"专项子课题(2002AA3Z1330 2).

The Preparation and Properties of a Kind of Sulfonium Salt PAG Applicable for 193 nm Photoresist

WANG Wen-jun, LI Hua-min, WANG Li-yuan

Department of Chemistry, Beijing Normal University, Beijing 100875, P. R. China

Received:2004-06-28 Revised:2004-08-30 Online:2005-01-23 Published:2005-01-23

摘要/Abstract

摘要： 制备了一种阳离子含有萘基,阴离子分别为对甲苯磺酸、甲磺酸及三氟甲磺酸的硫盐.它们有高的热解温度和在常用有机溶剂中较好的溶解性.测定了此类光产酸剂在水溶液及聚乙二醇固体膜层中的紫外吸收特性.结果表明,阴离子不含苯基时,在193nm处有很好的透明性.考察了其在低压汞灯照射下的光解性质,在254nm附近的吸收峰随光解进行迅速减弱.此类光产酸剂适用于氟化氩激光(193nm)等的化学增幅型光致抗蚀剂.

关键词: 光产酸剂, 光致抗蚀剂, 化学增幅, 硫盐

Abstract: Several sulfonium salts with different anions containing naphthyl group were prepared. These compounds show high pyrolysis temperature and good solubilities in commonly used organic solvents. The UV absorption of the PAGs in aqueous solution and in polyethylene glycol film was measured. The PAGs containing no benzene group display good transparency at 193 nm. The photolysis properties of the PAGs exposed with lower pressure Hg lamp (254 nm) were investigated with rapid weakening of the absorption peak around 254 nm after exposure. These PAGs are applicable to deep UV, such as ArF(193 nm), chemically amplified photoresist.

Key words: photoacid generator, photoresist, chemical amplification, sulfonium salt

中图分类号:

王文君, 李华民, 王力元. 一种适用于193nm光刻胶的硫盐光产酸剂的制备与性质[J]. 影像科学与光化学, 2005, 23(1): 48-54.

WANG Wen-jun, LI Hua-min, WANG Li-yuan. The Preparation and Properties of a Kind of Sulfonium Salt PAG Applicable for 193 nm Photoresist[J]. Imaging Science and Photochemistry, 2005, 23(1): 48-54.

参考文献

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一种适用于193nm光刻胶的硫盐光产酸剂的制备与性质

The Preparation and Properties of a Kind of Sulfonium Salt PAG Applicable for 193 nm Photoresist

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