含POSS光刻胶材料研究进展

doi:10.7517/issn.1674-0475.190605

摘要/Abstract

摘要： 光致抗蚀剂又称光刻胶，是微电子加工过程中的关键材料。多面体低聚倍半硅氧烷（POSS）是一种具有规则的笼型结构的聚合物增强材料，由POSS改性的聚合物实现了有机-无机纳米杂化，POSS刚性结构的引入阻碍了聚合物分子的运动，可以显著提高聚合物的玻璃化转变温度（T_g），降低聚合物的介电常数，提高聚合物的力学性能，也提高了含POSS光致抗蚀剂的耐蚀刻性。基于这些优点，含POSS的光刻胶材料得到广泛关注。本文对含POSS光刻胶的研究进展作了简要介绍。

关键词: 光致抗蚀剂, 含POSS, 光刻, 耐蚀刻性

Abstract: Photoresists are the key materials for micro-pattern processing. Polyhedral oligomeric silsesquioxane (POSS) is a kind of reinforcement material for polymer with regular cage structure. The polymer modified by POSS realizes organic-inorganic nano-hybridization. The introduction of rigid structure of POSS hinders the movement of polymer molecules, and so significantly increases the glass transition temperature (T_g), reduces the dielectric constant and improves the mechanical properties of the polymers. The etch resistance of POSS-containing photoresists is also enhanced. Based on these advantages, POSS-containing photoresist materials have attracted extensive attention. The research progress on POSS-containing photoresists is briefly introduced.

Key words: photoresist, POSS-containing, photolithography, etch resistance

尤凤娟, 韩俊, 严臣凤, 王力元. 含POSS光刻胶材料研究进展[J]. 影像科学与光化学, 2019, 37(5): 465-472.

YOU Fengjuan, HAN Jun, YAN Chenfeng, WANG Liyuan. Research Progress of POSS-containing Photoresist Materials[J]. Imaging Science and Photochemistry, 2019, 37(5): 465-472.

参考文献

[1] Wallraff G M, Hinsberg W D. Lithographic imaging techniques for formation of nanoscopic features[J]. Chemical Review, 1999, 99(7):1801-1822.
[2] Ito H. Chemical amplification resists:inception, implementation in device manufacture and new developments[J]. Journal of Polymer Science Part A-polymer Chemistry, 2003, 41(24):3863-3870.
[3] Ito H. Chemical amplification resists:history and development within IBM[J]. IBM Journal of Research and Deve-lopment, 2000, 44(1/2):119-130.
[4] Ito H, Willson C G. Chemical amplification in the design of dry developing resist materials[J]. Polymer Engineering Science, 1983, 23(18):1012-1018.
[5] Ito H. Chemically amplified resist:past, present and future[C]. In:Conley W. Proceedings of the Society of Photo-optical Insrrumentation and Engineers(SPIE). USA:SPIE-INT SOC Optical Engineering, 1999. 2-12.
[6] Ito T, Okazaki S. Pushing the limits of lithography[J]. Nature, 2000, 406(6799):1027-1031.
[7] Tegou E, Bellas V, Gogolides E, Argitis P, Eon D, Cartry G, Cardinaud C. Polyhedral oligomeric silsesquioxane (POSS) based resists:material design challenges and lithographic evaluation at 157nm[J]. Chemistry of Materials, 2004, 16:2567-2577.
[8] 刘玉荣, 黄玉东, 张学忠, 杨小波. POSS改性传统聚合物的研究进展[J]. 宇航材料工艺, 2005, 2:6-9. Liu Y R, Huang Y D, Zhang X Z, Yang X B. Research progress of the traditional polymer modified by POSS[J]. Aerospace Materials & Technology, 2005, 2:6-9.
[9] 卢婷利, 梁国正, 宫兆合, 任鹏刚, 张增平. 含倍半硅氧烷的杂化聚合物[J]. 高分子通报, 2004, (1):15-19. Lu T L, Liang G Z, Gong Z H, Ren P G, Zhang Z P. Hybrid polymer containing silsesquioxane[J]. Polymer Bulletion, 2004, (1):15-19.
[10] 肖明艳, 陈建敏.有机-无机杂化材料的研究进展[J]. 高分子材料科学与工程, 2001, 17(5):6-10. Xiao M Y, Chen J M. Research progress of organic-inorganic hybrid marerials[J]. Polymer Materials Science & Engineering, 2001, 17(5):6-10.
[11] Sellinger A, Laine R M. Silsesquioxanes as synthetic platforms:thermally curable and photo curable inorganic-organic hybrids[J]. Macromolecules, 1996, 29:2327-2330.
[12] Jakúbek V, Liu X Q, Vohra V R, Douki K, Kwark Y J, Ober C K. Strategies for high transparency acrylate resists for 157 nm lithography[J]. Journal of Photopolymer Science and Technology, 2003, 16(4):573-590.
[13] Eon D, Raballand V, Cartry G, Cardinaud C. Plasma oxidation of polyhedral oligomeric silsesquioxane polymers[J]. Journal of Vacuum Science and Technology B, 2006, 24(6):2678-2688.
[14] Li J, Yang S. Fabrication of High-aspect-ratio (up to 10) one-dimensional organic/inorganic hybrid nanogratings via holographic lithography[J]. Microelectronic Engineering, 2014, 128:7-11.
[15] Wu H P, Hu Y Q, Gonsalves K E, Yacaman M J. Incorporation of polyhedral oligomericsilsesquioxane in chemically amplified resists to improve their reactive ion Etching resistance[J]. Journal of Vacuum Science and Technology B, 2001, 19(3):851-856.
[16] Mendes L A V, Avila L F, Menezes J W, Pinho R R, Lima C R A, Cescato L, Rocco M L M. Photoresists comparative analysis using soft X-ray synchrotron radiation and time-of-flight mass spectrometry[J]. European Polymer Journal, 2009, 45:3347-3354.
[17] Yang D X, Frommhold A, Xue X, Palmer R E, Robinson A P G. Chemically amplified phenolic fullerene electron beam resist[J]. Journal of Materials Chemistry, 2014, 2(8):1505-1512.
[18] Givens R S, Kueper L M. Photochemistry of phosphate esters[J]. Chemical Society Reviews, 1993, 93(1):55-66.
[19] Shirai M, Kawaue A, Okamura H, Tsunooka M. Synthesis of novel photo-cross-linkable polymers with redissolution property[J]. Polymer, 2004, 45(22):7519-7527.
[20] Kumada T, Kubota S, Koezuka H. Relationship between patterning and dissolution characteristics of chemical amplification resists using partly protected poly(p-vinylphenol)[J]. Journal of Photopolymer Science and Technology, 1991, 4:469-472.
[21] Ali M A, Gonsalves K E, Agrawal A,Jeyakumar A, Henderson C L. A new nanocomposite resist for low and high voltage electron beam lithography[J]. Microelectronic Engineering, 2003, 70:19-29.
[22] Lin H M, Hseih K H, Chang F C. Characterization of negative-type photoresists containing polyhedral oligomeric silsesquioxane methacrylate[J]. Microelectronic Enginee-ring, 2008, 85:1624-1628.
[23] Kim J B, Ganesan R, Choi J H, Yun H J, Kwon Y G, Kim K S, Oh T H. Photobleachable silicon-containing molecular resist for deep UV lithography[J]. Chemistry of Materials, 2006, 16:3448-3451.
[24] Woo S A, Choi S Y, Kim J B. Non-chemically amplified resists containing polyhedral oligomericsilsesquioxane for a bilayer system[J]. Polymer, 2016, 98:336-343.