一种新型紫外正型光刻胶成膜树脂的制备及光刻性能研究

doi:10.7517/j.issn.1674-0475.2010.01.52

影像科学与光化学 ›› 2010, Vol. 28 ›› Issue (1): 52-58.DOI: 10.7517/j.issn.1674-0475.2010.01.52

一种新型紫外正型光刻胶成膜树脂的制备及光刻性能研究

谢文, 刘建国, 李平

华中科技大学, 化学与化工学院, 湖北, 武汉430074

收稿日期:2009-06-08 修回日期:2009-07-06 出版日期:2010-01-23 发布日期:2010-01-23
通讯作者: 李平(1957-), 女, 教授, 研究方向:化学与环境工程.
基金资助:
广东省科技攻关资助项目(2006B11801004)

A Novel UV Photoresist Matrix Resin and Its Photolithographic Processes

XIE Wen, LIU Jian-guo, LI Ping

College of Chemistry & Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei, P.R.China

Received:2009-06-08 Revised:2009-07-06 Online:2010-01-23 Published:2010-01-23

摘要/Abstract

摘要： 本文合成了N-(p-羧基苯基)甲基丙烯酰胺单体,并将其与N-苯基马来酰亚胺共聚得到共聚物聚N-(p-羧基苯基)甲基丙烯酰胺共N-苯基马来酰亚胺(poly(NCMA-co-NPMI)).将此共聚物作为成膜树脂,与感光剂、溶剂等复配得到一种新型耐高温紫外正型光刻胶.本文探讨了该光刻胶的最佳配方组成和最佳光刻工艺.最佳配方组成为:15%—20%成膜树脂,4.5%—6%感光剂和70%—80%溶剂;最佳光刻工艺为:匀胶30 s(4000 rpm),前烘4 min(90℃),感度为30—35mJ/cm²,在0.2%TMAH溶液显影10 s和后烘2 min(90℃).

关键词: 紫外正型光刻胶, 光刻

Abstract: The poly(N-(p-carboxylphenyl)methacrylamide-co-N-phenylmaleimide) was copolymerized with monomer N-(p-carboxylphenyl)methacrylamide(NCMA) and N-phenylmaleimide(NPMI). To apply this copolymer as the matrix resin with photosensitizer and solvents to fomulate a novel thermostable UV positive photoresist.The photoresist formulation and the photolithographic process were studied and optimized.Its optimal formulation was 15%—20%matrix resin, 4.5%—6%photo-sensitizer,and 70%—80%solvent,and its photolithographic process was spincoating 30 s(4000 rpm),pre-baking 4 min at 90℃,exposuring 3 min,developing in 0.2% TMAH aqueous solution for 10 s and then post-baking 2 min at 90℃.

Key words: UV positive photoresist, photolithography

中图分类号:

谢文, 刘建国, 李平. 一种新型紫外正型光刻胶成膜树脂的制备及光刻性能研究[J]. 影像科学与光化学, 2010, 28(1): 52-58.

XIE Wen, LIU Jian-guo, LI Ping. A Novel UV Photoresist Matrix Resin and Its Photolithographic Processes[J]. Imaging Science and Photochemistry, 2010, 28(1): 52-58.

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一种新型紫外正型光刻胶成膜树脂的制备及光刻性能研究

A Novel UV Photoresist Matrix Resin and Its Photolithographic Processes

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