用于浸没式工艺的光刻胶研究进展

doi:10.7517/j.issn.1674-0475.2009.05.379

影像科学与光化学 ›› 2009, Vol. 27 ›› Issue (5): 379-390.DOI: 10.7517/j.issn.1674-0475.2009.05.379

用于浸没式工艺的光刻胶研究进展

何鉴¹, 盛瑞隆², 穆启道¹

1. 北京科华微电子材料有限公司, 北京, 101312;
2. 中国科学院, 上海有机化学研究所, 上海, 200032

收稿日期:2009-03-31 修回日期:2009-04-29 出版日期:2009-09-23 发布日期:2009-09-23
通讯作者: 穆启道(1963-), 男, 硕士, 教授级高级工程师, 主要从事微电子化工材料的研发与管理.
基金资助:
北京市科技计划项目(课题编号:Z08080302110801)

Progress in Photoresist for Immersion Lithography

HE Jian¹, SHENG Rui-long², MU Qi-dao¹

1. Beijing Kempur Microelectronics Inc., Beijing 101312, P.R.China;
2. Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, Shanghai 200032, P.R.China

Received:2009-03-31 Revised:2009-04-29 Online:2009-09-23 Published:2009-09-23

摘要/Abstract

摘要： 浸没式光刻技术是在原干法光刻的基础上采用高折射率浸没液体取代原来空气的空间,从而提高光刻分辨率的一种先进技术.此项技术的实际应用,为当前IC产业的飞速发展起到了关键的作用.本文概述了浸没式光刻技术的发展历程和浸没式光刻胶遇到的挑战及要求;对浸没式光刻胶主体树脂、光致产酸剂及添加剂的研究进展进行了综述;最后对浸没式光刻胶的研究发展方向作了进一步的探讨及初步预测.

关键词: 浸没式光刻, 光刻胶, 主体树脂, 光致产酸剂

Abstract: Immersion lithography is an advanced technology to improve the resolution,which uses high refractive index immersion liquids to replace the original air space based on dry lithography.The application of the technology plays a key role in the rapid development of IC industry.This paper gives an overview of development history of immersion lithography,the challenges being faced and the requirements of the immersion photoresist;the recent progress of the main resin,the photo-acid generator and the additives are reviewed.At last the research and development trend of immersion photoresist is explored and a preliminary forecast is made.

Key words: immersion lithography, photoresist, resin, photo-acid generator

中图分类号:

TQ57

何鉴, 盛瑞隆, 穆启道. 用于浸没式工艺的光刻胶研究进展[J]. 影像科学与光化学, 2009, 27(5): 379-390.

HE Jian, SHENG Rui-long, MU Qi-dao. Progress in Photoresist for Immersion Lithography[J]. Imaging Science and Photochemistry, 2009, 27(5): 379-390.

参考文献

[1] Fukami Y,Magome N.Projection exposure method and system[P].International Patent Application,WO99/49504,PCT/JP99/01262,1999-09-30.
[2] Switkes M,Rothschild M.Resolution enhancement of 157nmlithography by liquid i mmersion[C].Proc.SPIE,2002,4691:459-465.
[3] Lin BJ.I mmersionlithography andits i mpact on semiconductor manufacturing[J].J.Microlithogr.Microfabri-cation,Microsyst.,2004,3:377-395.
[4] Padmanaban M,Romano A,Lin G,et al.Performance of a dry 193nmresist under wet conditions[C].Proc.SPIE,2006,6153:615307-11.
[5] Owa S,Nagasaka H.I mmersion lithography:its history,current status and future prospects[C].Proc.SPIE,2008,7140:714015-12.
[6] Smith B W,Fan Y,Slocum M,et al.25 nmi mmersion lithography at a 193 nm wavelength[C].Proc.SPIE,2005,5754:141-147.
[7] Gronheid R,Hendrickx E,Wiaux V,et al.Lithography options for the 32 nmhalf pitch node andtheir i mplicationson resist and material technology[C].Proc.SPIE,2007,6827:68271V-10.
[8] Honda K,Morita M,Otsuka H,et al.Molecular aggregation structure and surface properties of poly(fluoroalkylacrylate)thin fil ms[J].Macromolecules,2005,38:5699-5705.
[9] Varanasi P R,Kwong R W,Khojasteh M,et al.193 nmsingle layer photoresists:defeating tradeoffs with a newclass of fluoropolymers[C].Proc.SPIE,2005,5753:131-139.
[10] Ito H,Truong HD,Allen R D,et al.ArF exci mer laser resist based on fluoroalcohol[J].Polym.Adv.Tech-nol.,2006,17(2):104-115.
[11] Lee S H,Ki mJ W,Ki mJ W,et al.Polymer structure modifications for i mmersion leaching control[C].Proc.SPIE,2007,6519:651925-9.
[12] Wu S,Lee S S,Yu C C,et al.Process development andresist modificationfor metal trenchlayersfrom65nmto 45nmnodes[C].Proc.SPIE,2006,6153:615334-14.
[13] Toriumi M,Shida N,Watanabe H,et al.Fluoropolymer resists for 157-nmlithography[C].Proc.SPIE,2002,4690:191-199.
[14] Sasaki T,Shirota N,Takebe Y,et al.Development of newresist materialsfor 193-nmdry andi mmersionlithogra-phy[C].Proc.SPIE,2006,6153:61530E-8.
[15] Shirota N,Takebe Y,Wang S Z,et al.Development of non-topcoat resist polymersfor 193-nmi mmersionlithogra-phy[C].Proc.SPIE,2007,6519:651905-11.
[16] Sundberg L K,Sanders D P,Sooriyakumaran R,et al.Contact angles&structure/surface property relation-ships of i mmersion materials[C].Proc.SPIE,2007,6519:65191Q-9.
[17] Sanders D P,Sundberg L K,Sooriyakumaran R,et al.Fluoroalcohol materials with tailored interfacial propertiesfor i mmersionlithography[C].Proc.SPIE,2007,6519:651904-12.
[18] Wada K,Kanna S,Kanda H,Novel materials design for i mmersion lithography[C].Proc.SPIE,2007,6519:651908-6.
[19] Wang D,Caporale S,Andes C,et al.Design considerationfor i mmersion 193:embedded barrier layer and patterncollapse margin[J].J.Photopolym.Sci.Tech.,2007,20:687-696.
[20] Wu S,Tseng A,Lin B,et al.Non-topcoat resist design for i mmersion process at 32-nmnode[C].Proc.SPIE,2008,6923,692307-14.
[21] Li W,Chen KJ,Kwong R,et al.High performance 193 nmphotoresists based on fluorosulfonamide[C].Proc.SPIE,2007,6519:65190F-10.
[22] Blakey I,Conley W,George G A,et al.Synthesis of high-refractive index sulfur containing polymers for 193-nmi mmersionlithography;a progress report[C].Proc.SPIE,2006,6153:61530H-10.
[23] Whittaker A K,Blakey I,Liu H,et al.High-RI resist polymers for 193 nmi mmersion lithography[C].Proc.SPIE,2005,5753:827-835.
[24] Blakey I,Chen L,Dargaville B,et al.Novel high-index resists for 193 nmi mmersionlithography and beyond[C].Proc.SPIE,2007,6519:651909-10.
[25] Matsumoto K,Costner E A,Nishi mura I,et al.Highindex resist for 193 nmi mmersionlithography[J].Macro-molecules,2008,41(15):5674-5680.
[26] Matsumoto K,Costner E,Nishi mura I,et al.High-index resist for 193-nmi mmersion lithography[C].Proc.SPIE,2008,6923:692305-9.
[27] Miyamatsu T,Wang Y,Shi ma M,et al.Material designfor i mmersionlithography with highrefractiveindexfluid(HIF)[C].Proc.SPIE,2005,5753:10-19.
[28] Gaugiran S,Feilleux R,Sourd C,et al.Leaching mechanisms in i mmersion lithography with or without top coat[J].Microelectronic Engineering,2007,84:1054-1057.
[29] Tsuji H,Yoshida M,Ishizuka K,et al.Resist development status for i mmersionlithography[J].J.Photopolym.Sci.Tech.,2005,18:641-645.
[30] Wang D,Compositions and processes for i mmersionlithography[P].US patent0 246 373 A1,2006-11-02.
[31] Endo K,Yoshida M,Hirayama T,et al.Resist composition for liquidi mmersion exposure process and method offorming resist pattern therewith[P].US patent7 264 918 B2,2007-09-04.
[32] Wang M,Jarnagin N D,Lee C-T,et al.Novel polymeric anionic photoacid generators(PAGs)and correspondingpolymers for 193 nmlithography[J].J.Mater.Chem.,2006,16:3701-3707.
[33] Wang M,Lee C T,Henderson C L,et al.Incorporation of ionic photoacid generator(PAG)and base quencherintothe resist polymer main chain for sub-50 nmresolution patterning[J].J.Mater.Chem.,2008,18:2704-2708.
[34] Wu H,Gonsalves K E.Novel positive-tone chemically amplified resists with photoacid generator in the polymerchains[J].Adv.Mater.,2001,13(9):670-672.
[35] Jung J C,Bok C K,Li m C M,et al.Polymer for i mmersion lithography,photoresist composition containing thesame,method of manufacturing a semiconductor device,and semiconductor device[P].US patent0 275 695 A1,2006-12-7.
[36] Tanaka S,Ober C K.Adamantane based molecular glass resists for 193 nmlithography[C].Proc.SPIE,2006,6153:61532B-12.
[37] Silva A D,Felix N M,Ober C K.Molecular glass resists as high-resolution patterning materials[J].Adv.Mater.,2008,20(17):3355-3361.
[38] Sooriyakumaran R,Truong H,Sundberg L,et al.Molecular resists based on polyhedral oligomeric silsesquioxanes(POSS)[C].Proc.SPIE,2005,5753:329-337.
[39] Tully D C,Tri mble A R,Frechet J MJ.Dendri mers with thermally labile end groups:an alternative approach tochemically amplified resist materials designedfor sub-100 nmlithography[J].Adv.Mater.,2000,12(15):1118-1122.
[40] Ki m J-B,Oh T-H,Ki m K,Nanomolecular resists with adamantane core for 193-nm[C].Proc.SPIE,2005,5753:603-610.
[41] Lawson R A,Lee C-T,Whetsell R,et al.Molecular glass photoresists containing photoacid generator functionalitya route to a single-molecule photoresist[C].Proc.SPIE,2007,6519:65191N-10.

用于浸没式工艺的光刻胶研究进展

Progress in Photoresist for Immersion Lithography

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