248nm深紫外光刻胶

doi:10.7517/j.issn.1674-0475.2003.05.346

影像科学与光化学 ›› 2003, Vol. 21 ›› Issue (5): 346-356.DOI: 10.7517/j.issn.1674-0475.2003.05.346

248nm深紫外光刻胶

郑金红, 黄志齐, 侯宏森

北京化学试剂研究所, 北京, 100022

收稿日期:2003-05-15 修回日期:2003-06-03 出版日期:2003-09-23 发布日期:2003-09-23
通讯作者: 郑金红(1967- ),女,北京化学试剂研究所有机室主任,高级工程师,主要从事微电子化学品光刻胶的研究,通讯联系人.

EVOLUTION AND PROGRESS OF DEEP UV 248 nm PHOTORESISTS

ZHENG Jin-hong, HUANG Zhi-qi, HOU Hong-sen

Beijing Institute of Chemical Reagents, Beijing 100022, P. R. China

Received:2003-05-15 Revised:2003-06-03 Online:2003-09-23 Published:2003-09-23

摘要/Abstract

摘要： 本文从化学增幅技术的产生,深紫外248nm胶主体树脂及PAG发展历程、溶解抑制剂、存在的工艺问题及解决途径多个方面综述了深紫外248nm胶的发展与进步.

关键词: 化学增幅, KrF激光, 深紫外光刻, 248nm光刻胶, 主体树脂, 酸催化, 光致产酸剂

Abstract: Deep UV lithography operating at 248 nm with use of chemical amplification resists has finally become a production technology.This paper describes the evolution and progress of the deep UV 248 nm photoresists from aspects of birth of chemical amplification technology,evolution of deep UV 248 nm resists in matrix resins and PAG,dissolution inhibitor,processing problems and solutions of them.

Key words: chemical amplification, KrF excimer laser, deep UV lithography, 248 nm photoresists, matrix resins, acid-catalysis, photoacid generator

中图分类号:

郑金红, 黄志齐, 侯宏森. 248nm深紫外光刻胶[J]. 影像科学与光化学, 2003, 21(5): 346-356.

ZHENG Jin-hong, HUANG Zhi-qi, HOU Hong-sen. EVOLUTION AND PROGRESS OF DEEP UV 248 nm PHOTORESISTS[J]. Imaging Science and Photochemistry, 2003, 21(5): 346-356.

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248nm深紫外光刻胶

EVOLUTION AND PROGRESS OF DEEP UV 248 nm PHOTORESISTS

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