影像科学与光化学 ›› 2003, Vol. 21 ›› Issue (1): 61-71.DOI: 10.7517/j.issn.1674-0475.2003.01.61
余尚先, 杨凌露, 张改莲
收稿日期:
2002-09-01
修回日期:
2002-10-08
出版日期:
2003-01-23
发布日期:
2003-01-23
通讯作者:
余尚先, 北京师范大学应用化学研究所感光高分子研究室主任, 教授.主要从事光功能高分子及非银盐信息记录材料的研究.
基金资助:
YU Shang-xian, YANG Ling-lu, ZHANG Gai-lian
Received:
2002-09-01
Revised:
2002-10-08
Online:
2003-01-23
Published:
2003-01-23
摘要: 本文对近10年来有关ArF激光(193nm)光致抗蚀剂的研究开发情况进行了调研,对193nm光致抗蚀剂组成物的各个组分进行了归纳综述.从本文可以看出,利用193nm成像技术可以刻画线幅很细(<0.13μm)的图像,能适应信息技术的发展对于光致抗蚀剂高分辨率的要求.但若想将193nm成像技术在实践中推广应用,还有诸多问题需待研究解决.
中图分类号:
余尚先, 杨凌露, 张改莲. ArF激光光致抗蚀剂的研究进展[J]. 影像科学与光化学, 2003, 21(1): 61-71.
YU Shang-xian, YANG Ling-lu, ZHANG Gai-lian. THE PROGRESS OF ArF EXCIMER LASER PHOTORESIST[J]. Imaging Science and Photochemistry, 2003, 21(1): 61-71.
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