1 林鸿溢.跨世纪新科学——纳米电子学.电子学报 1995 23(2):59~63 Ling H Y. Progress in Nanoelectronics. Acta Electronica Sinica, 1995,23(2):59~63 2 Allen R D, et al., Deep-UV resist technology. In: Choudhury P R, ed. Handbook of Micromachining and Microfabrication. UK: Michael Feraday House, 1997 3 Allen R D, et al., Photoresists for 193-nm lithography. IBM J. Res. Develop., 1997, 41:102 4 Ogawa T, The state-of-the-art of ArF excimer laser lithography. J. Photopolym. Sci. Technol., 1996, 9:379~385 5 Hofer D C, Allen R et al., 193-nm photoresist R&D: the risk & challenge. J. Protopolym. Sci. Technol., 1996, 9:387~397 6 Canning J. Potentials and challenges for lithography beyond 193-nm optics. J. Vac. Sci. Technol. B, 1997, 15(6):2109 7 Ito H. Chemical amplification resists: history and development within IBM. IBM J. Res. Develop., 1997, 41:69 8 Reichmanis E, Nalamasu O, et al. Resin design concepts for 193-nm lithography: Opportunities for innovation and invention. J. Vac. Sci. technol. B, 1997,15(6):2528 9 Reichmanis E, Nalamasu O. In: Salamone J C, ed. Polymeric Materials Encyclopedia. Boca Raton: Chemical Rubber, 1996 10 Asakawa K, Ushirogouchi T, et al. Effect of basic additives on sensitivity and diffusion of acid in chemical amplified resist. Proc. SPIE, 1995,(2438):563 11 Seeger D E, La D C, et al. Thin-film imaging past, present, prognosis. IBM J. Res. Develop. 1997, 41:105 12 Allen R D, Wallraff G M, et al. High performance acrylic polymers for chemical amplified photoresist applications. J. Vac. Sci. Technol. B, 1991,9:3357 13 Kaimoto Y, et al. Acrylic polymer for ArF and KrF excimer resist based on chemical amplification. Proc. SPIE, 1992,(1672):66 14 Ito H, Willson C G, et al. Resist compositions. US patent, 4 491 628.1985 15 Shida N, Ushirogouchi T, et al. Novel ArF excimer laser resists based on menthyl methacrylate terpolymer. J. Photopolym. Sci. Technol., 1996,9:457 16 Shida N, Okino T, et al. Chemical amplified ArF resists based on menthyl acrylate copolymer protected with cleavable alicyclic group and the absorption band shift method. Proc. SPIE, 1998,(3333):10 17 Iwasa S, Maeda K, et al. Design and characterization of alicyclic polymers with alkoxyethyl protecting groups for ArF chemical amplified resists. J. Photopolym. Sci. Technol., 1996,9:447 18 Nozaki K, Watanabe K, et al. A novel polymer for a 193-nm resist. J. Photopolym. Sci. Technol., 1996,9:509 19 Dentingger P M, Taylor J W. Increasing plasma etch resistance of resists using fullerene additives. J. Vac. Sci. Technol. B., 1997,15(6):2575~2581 20 Jung J Ch, Bok Ch K, et al. Design of cycloolefin-maleic anhydride resist for ArF lithography. Proc. SPIE, 1998, (3333):02 21 Houlihan F M, Kometani J M, et al. 193-nm single-layer photoresists based on alternating copolymers of cycloolefins formulation and processing. Proc. SPIE, 1998,(3333):08 22 Kim S J, Park J H, et al. Novel single-layer photoresist containing cycloolefins for 193-nm, Proc. SPIE, 1998,(3333):61 23 Meagley R, Frechet J M, et al. Functionalized polyspironorbornanes: a new family of polymers for use in 193-nm lithography. Proc. SPIE, 1998,(3333):09 24 Suwa M, Kajita T, et al. ArF single layer photoresist based on alkaline-developeable ROMP-H resin. Proc. SPIE, 1998,(3333):03 25 Blakeney A J, White D et al. Thermal stability of silicon-containing methacrylate based bilayer resist for 193-nm lithography. Proc. SPIE, 1998,(3333):14 26 Allen R D, et al. Protecting groups for 193-nm photoresists. Proc. SPIE, 1996,(2724):334 27 Paniez P J, Pain L. Towards a better understanding of positive chemically amplified system. J. Photopolym. Sci. Technol. 1995,8:643 28 Schaedeli U, Tinguely E, et al. Evaluation of materials for 193-nm lithography. J. Photopolym. Sci. Technol., 1996,9:435 29 Allen R D, et al. Progress in 193-nm single layer resists: the role of photoacid generator structure on the performance of positive resists. ACS. Symp. 1998, 706:224~236 30 Nalamasu O, Houlihan F M, et al. 193-nm single layer resist strategies, concepts, and resent results. J. Vac. Sci. Technol. B., 1998,16(6):3716 31 Nakano K, Maeda K, et al. Practical resolution enhancement effect by new complete antireflective layer in KrF excimer laser photolithography. Proc. SPIE 1993, (1927):263 32 Kudo K, et al. Enhancement of the sensitivity of chemical amplification type photoimaging materials by β-tosyloxyketone acetals. J. Photopolym. Sci. Technol., 1995,8:45 33 Ohfuji T, et al. Characterization of chemically amplified resists with “acid amplifier” for 193-nm lithography. J. Photopolym. Sci. Technol., 1997, 10:551 34 Bloomstein T M, Horn M W, et al. Lithography with 157nm lasers. J. Vac. Sci. Technol. B 1997,15(6):2112 35 Silverman J P. X-ray lithography: status, challenge, and outlook for 0.13!μm. J. Vac. Sci. Technol. B, 1997, 15(6):2117 36 Lu J P, Hong X Y, Wu B, et al. Studies on the chemically applied development-free vapor photolithography. J. Photochem. Photobiol. A, 1997, 110:313~316 37 Hong X Y, Lu J P, et al. Development-free vapor laser photolithography with 0.4 micron resolution. J. Vac. Sci. Technol. B, 1997,15:3 38 Duan S Q, Hong X Y. Studies on the reaction mechanism of DFVP. J. Photopolym. Sci. Technol., 1998, 11:173 |